| 摘要 |
PURPOSE:To enhance photosensitivity, durability, etc., by forming on a conductive substrate a photoconductive amorphous silicon layer having a layer region contg. O in a specified distribution in the thickness direction, and a layer region contg. an element of group V of the periodic table in a uniform distribution overlapped on the substrate side of this region. CONSTITUTION:On a conductive substrate 101, a layer region 103 is formed contg. O in a distribution rich on the side of the substrate 101 and uniform and continuously decreasing in the upward thickness direction to zero or nearly zero at the free surface 106. On the substrate 101 side in the region 103 a layer region 104 is formed contg. an element of group V of the periodic table, such as P or As, in a uniform distribution together with O. The region 103 is formed so as to satisfy the following relationship: t/(T+t)<=4, where (t) is thickness of the region 104, and T is thickness of a layer region 105 located on the region 104, not contg. P or the like, but only O. A photoconductive material 100 having a photoconductive amorphous Si layer 102 contg. Si as a main component, and enhanced photosensitivity and durability is thus obtained. |
