Static-type semiconductor memory device.

摘要

A static-type semiconductor memory device includes peripheral circuits (20, 21), provided with at least a decoder, and memory cells (25). A high-voltage generating unit is provided in the chip so that a first power-source voltage (Vcc) supplied from an external unit is boosted to a second power source voltage level (Vcc) higher than said first power source voltage level. The first power-source voltage is supplied to the peripheral circuits and the second power-source voltage is supplied to the memory cells, thereby improving their stability in the presence of disturbances such as alpha -rays.