| 摘要 |
PURPOSE:To improve the performance of the high speed operation of a semiconductor device in the manufacture of an LSI MOS semiconductor device using a high melting point metal or metal silicide as a gate electrode by performing a mask oxidation at relatively low temperature, thereby eliminating contamination such as channeling phenomenon at ion implanting time and adherence of foreign material and obtaining a stable threshold voltage. CONSTITUTION:A field oxidized film 2, a gate oxidized film 3 and an amorphous Mo-Si film 4 are sequentially formed on a silicon wafer 1. Then, the film 4 is partly opened by a photolithographic method, etched, and further etched at the film 3 with the remaining film 4 as a mask. Subsequently, a mask oxidized film 5 of 200Angstrom thick is formed by a plasma oxidizing method, an ion implantation is performed through the film 5, thereby forming a source 6 and a drain 7. Eventually, an intermediate insulating film 8 is accumulated by a CVD method, the source and drain 6, 7 are then opened by a photolithographic method, thereby forming source and drain electrodes 9, and an MOS semiconductor device is formed again by a photolithographic method. |
