| 摘要 |
A multi-colour or other multi-level infra-red detector comprises at least one first detector element (10) formed in a first portion (11) of a lower body (11, 12, 13), e.g. of cadmium mercury telluride, and at least one second detector element (20) having different detector characteristics formed in an upper body (21) e.g. of cadmium mercury telluride. The lower body is divided preferably by ion-milling into at least two (and more usually three or more) portions (11, 12 and 13) separated from each other by gaps (14, 15) which are bridged by the upper body (21). Electrical connections to the second detector element(s) comprise the separate second (and further) portions (12 and 13) of the lower body and preferably include metallization layers (2 and 3) extending from the top to the substrate (1) on which the lower body (11, 12, 13) is mounted. The substrate (1) may be of insulating material, e.g. sapphire, or it may be for example a silicon CCD for processing signals from the detector elements (10 and 20).
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