| 摘要 |
PURPOSE:To improve the reliability of a semiconductor device by forming an overhang in the formation of a pattern by a lift-off method and obliquely forming the depositing angle of a metal forming at least two layers, thereby preventing the reaction in the multilayer metal structure and eliminating the deterioration in the characteristics. CONSTITUTION:An N type active region 2 and N type high density regions 3a, 3b to become a source and a drain are formed on the surface of a substrate 1. Then, ohmic contacts of Au-Ge films 6a, 6b with source and drain regions 3 are formed, a window 10 is opened at the region to become a gate, the window 10 is further etched, thereby forming a window 11 to becomes the gate region forming part. The window 11 is larger in size then the window 10, thereby forming an overhang 8a of photosensitive region 8. Metal 12 such as aluminum, reaction preventing metal 13 such as Pt or the like are formed on the region 8 and from the window 10 onto the region 2, and part 12a of the metal 12 and part 13a of the metal 12 are formed on the region 2. Parts of the metals 12a, 13a are formed directly under the overhangs by deposition obliquely designated by arrows 14, 15 so that the aluminum 12a may not contact directly with the gold 13a. |
