| 摘要 |
PURPOSE:To extremely reduce a source resistance and to enhance the integration of a field effect transistor by forming an N type inverted layer on the surface of a P type gallium arsenide substrate. CONSTITUTION:A low density P type GaAs layer 25 is epitaxially grown on a high density-type substrate 21. Then, an n type gallium aluminum arsenide layer 22 is continuously epitaxially grown. Then, W, Pt or Al is, for example, deposited as a metal to become a gate electrode, the gate part is merely allowed to remain, and an electrode metal 23 and the layer 22 are etched. Subsequently, with the gate electrode as a mask a high density N type region 24 is formed by Si ion implantation, thereby obtaining an enhancement GaAs field effect transistor having source and drain of the region 24. |
