| 摘要 |
PURPOSE:To increase the density of electrons and to accelerate the generation of plasma, by placing a microwave oscillator at the outside of a sputtering apparatus and by irradiating the interior of the chamber of the apparatus with microwaves. CONSTITUTION:An anode 6 and a cathode 7 are arranged in a chamber 1, a product 12 to be treated is set, and a gas for sputtering is introduced. Voltage is applied between the electrodes 6, 7 to convert the gas into plasma, and part of a target material 8 is deposited on the surface of the product 12 by the plasma. At this time, the interior of the chamber 1 is irradiated with microwaves from a microwave oscillator 14 placed at the outside of the chamber 1 to increase the density of electrons and to accelerate the generation of plasma. |
