| 摘要 |
PURPOSE:To enhance the reliability of a semiconductor integrated circuit device by forming a Schottky diode for preventing a latchup on an epitaxial layer potentially floating surrounded by a buried layer and an island region. CONSTITUTION:When an n<-> type epitaxial layer 1 is grown on an n<-> type substrate 1, a p<-> type buried layer 9 is filled at the position to be formed with a Schottky barrier diode on the substrate. A p type isolating region 10 is further formed to surround part of the layer 1, a p<+> type isolating region 6 is diffused partly, and connected to a point (d) of the lowest potential on the circuit. An n<+> type region 4 for contacting the anode (e) of the Schottky barrier diode with the cathode (f) is formed on the n<-> type epitaxial layer surounded by them. Since a p-n junction is always formed in a reverse bias state, any potential on the circuit can be applied to the n<-> type epitaxial region to become the cathode of the Schottky barrier diode. |
