METHOD FOR POLISHING OXIDE SINGLE CRYSTAL SUBSTRATE

摘要

PURPOSE:To improve the speed for polishing an oxide single crystal substrate, by polishing said substrate mechanically and chemically with polishing cloth by the use of a colloidal soln. of fine particles of alkaline colloidal silica having specific grain sizes. CONSTITUTION:Fine particles of alkaline colloidal silica having 50-150mum average grain sizes is suspended to make 10-50wt% concn., whereby polishing liquid consisting of the colloidal soln. is obtd. A single crystal substrate of oxide is polished mechanically and chemically under 250-3,000g/cm<2> pressure with soft polishing cloth by using such polishing liquid. The density of the working defects to be generated is thus decreased considerably.