| 摘要 |
PURPOSE:To reduce the leakage of the output between plasma sensors by forming as plasma coupling elements P type or N type diffused region between sole junction transistors and constructing to partly isolate between the elements by a P-N junction, thereby accelerating the switching speed of the transistor and improving the transfer speed at the shift register operating time. CONSTITUTION:A P type diffused region 23 having a pectinated structure and formed to reach a silicon substrate 12 is formed in an N type silicon layer 11. The absorbing speed of solid plasma generated directly under hook type collectors 51-54 is increased by increasing the area of a P type region surrounding the collectors. As a result, the switching speed of sole junction transistor can be improved. Further, the position of the pectinated end of the region 23 is allowed to coincide with the end of the collector, and the pectinated end is extended to the vicinity of the emitter regions 31-34, thereby further reducing the cross-talk. |
