| 摘要 |
PURPOSE:To obtain a GaN single crystal of low carrier concn. at low temp. by causing direct reaction of Ga atoms and N atoms which are activated in a plasma state. CONSTITUTION:A substrate 21 is placed on the susceptor 13 in a reaction tube 11 so as to bring the (0001)C facet to the top surface, and org. gallium is packed in a vessel 15; at the same time, the inside of the tube 11 is evacuated to about 10<-3>Torr with a vacuum pump 20. Electricity is conducted to the heaters incorporated in an electric furnace 19 and the susceptor 13 to heat the inside of the tube 11 to about 600 deg.C, whereafter a carrier gas is introduced through a gas introducing pipe 16 into the vessel 15 so as to carry the org. gallium. Said gas is supplied into the tube 11 and gaseous NH3 is supplied through an outside pipe 12A into the tube 11. Both gases are activated to a plasma state by the high frequency electric discharge in the 1st region 11A in the tube 11, then the direct reaction of Ga atoms and N atoms is caused in the 2nd region 11B to GaN, which is deposited as a GaN single crystal on the substrate 21. |
