| 摘要 |
PURPOSE:To obtain a photovoltaic device having excellent curve factor of photovoltaic characteristics by heating a semiconductor junction element containing true amorphous silicon formed with an electrode on one or both side surfaces at a temperature not lower than 70 deg.C. CONSTITUTION:In a photovoltaic device in which metal (e.g., A, Cr, Mo, SUS, etc.) is ohmically contacted as a back electrode in a photovoltaic element in which an amorphous photovolatic element such as P-I-N or N-I-P type is formed on a transparent substrate ( a board or film of glas or plastic) with a transparent electrode made, for example of metal oxide such as InO2, SnO2, InO2+ SnO2 or metal of thin film or composite electrode of thin film and metal oxide, the back electrode is formed, and heated at a temperature not higher than 70 deg.C or preferably not higher than 100 deg.C. The heat treatment is preferably performed in inert gas such as N2, Ar, He, IVe and further preferably in vacuum. For example, when a solar battery of P type a-SiC: H/i-n a-Si:H/Al electrode is treated at 180 deg.C for 30min, the fill factor is improved from 60% to 71% before the heat treatment. |
