发明名称 METHOD FOR VACUUM DEPOSITION OF VANADIUM
摘要 PURPOSE:To carry out vacuum deposition at a low temp. and to save electric power for heating by evaporating VOCl2 or VCl4 in vacuum, blowing gaseous hydrogen to reduce the vapor, and depositing V on a substrate. CONSTITUTION:A crucible 1 holding VOCl2 or VCl4 2 in a vacuum vessel 8 is kept at about 300 deg.K with a heating and cooling mechanism 3 while evacuating the vessel 8. The VOCl2 is converted into vapor 4 by evaporation up to about 10 Torr. The VCl4 is converted into vapor 4 by evaporation up to about 1X10<-2> Torr. By blowing gaseous hydrogen through a nozzle 5 in the state, a reaction is caused between the gaseous hydrogen and the vapor 4 of the VOCl2 or VCl4 2 to produce V, and a deposited V film 7 is formed on a substrate 6. Thus, the unfavorable influence of radiant heat on the substrate 6 and the apparatus can be reduced.
申请公布号 JPS58161767(A) 申请公布日期 1983.09.26
申请号 JP19820042430 申请日期 1982.03.17
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 NAGAI KAZUTOSHI;KUWANO HIROKI
分类号 C23C16/50;C23C16/14 主分类号 C23C16/50
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