| 摘要 |
PURPOSE:To prevent the auto-doping of a P type impurity by a method wherein gallium or indium is used as the impurity for acceptor which is added into a P type semiconductor layer. CONSTITUTION:The first non-single crystal semiconductor layer wherein P type silicon, germanium or silicon carbide added with gallium or indium is the main constitutent is provided on a substrate or the electrode constituted of a conductive layer on the substrate. In this manner, the auto-doping of P type impurity into the second non-single semiconductor layer formed on this semiconductor layer can be prevented. |
