| 摘要 |
PURPOSE:To prevent the auto-doping of a P type into the second non-single crystal semiconductor layer, by providing the first P type non-single crystal semiconductor layer on a substrate or an electrode, in a photoelectric converter for generation of photovoltage. CONSTITUTION:An auxiliary electrode 41 is provided in the photo-transmitting substrate 40, and further the transparent conductive film 43 is formed. The first P type semiconductor layer 44 is formed thereon, further addition of the impurity is performed, and accordingly the second I type semiconductor layer 45 wherein ono-single crystal Si is the main constitutent is formed. Since the impurity to produce the first semiconductor layer is mixed to the depth of 50- 100Angstrom at the time of formation of the second semiconductor layer, this I layer is formed at 100Angstrom or more, and it is contrived thay the P type impurity and the N type impurity formed thereafter are not directly mixed at a constant density or more. Next, the third N type semiconductor layer 46 is formed. |
