| 摘要 |
An improved field effect transistor sense amplifier uses an cross-coupled pair of first transistor(Q1,Q2) with separate third and fourth transistor (Q3,Q4) connected by the sources (12.14) to each of one of cross-coupled terminals (12,14) of the cross-coupled pair (Q1,Q2). Read circuitry (Q7,Q8) is connected directly to the cross-coupled terminals (12,14) of the cross-coupled pair (Q1,Q2). Write circuitry(Q9,Q10) is connected to the drains (18,22) of the third and fourth transistors (Q3,Q4). |
