| 摘要 |
A back reflector for a photovoltaic device includes a layer of highly reflective material (114), such as a highly reflective and conductive metal of copper, gold, silver, or aluminum, or alloys thereof. Between the layer (114) of highly reflective material and the semiconductor regions (116, 118, 120) of the device is a layer (115) of a transparent conductor. The transparent conductor (115) can be, for example, a transparent conductive oxide such as indium tin oxide, cadmium stannate, or doped tin oxide. The reflector is particularly useful with p-i-n type devices formed from fluorine containing amorphous silicon. <IMAGE> |
