SEMICONDUCTOR MEMORY DEVICE INCLUDING A FLIP-FLOP CIRCUIT

摘要

A semiconductor memory device having flip-flop circuits, in which first and second bit lines are connected to each of the flip-flop circuits as a sense amplifier, the potential of the second bit line being opposite to the potential of the first bit line, and the first and second data bus lines cross perpendicularly to the first and second bit lines, respectively, the first and second dummy lines are arranged in parallel with the first and second data bus lines respectively, in order to prevent erroneous operation of an I/O amplifier connected to the first and second data bus lines.