| 摘要 |
PURPOSE:To produce a strong capacity coupling between a control gate region and a floating gate electrode with small area by controlling the voltage of the floating gate electrode with the voltage of the control gate region of a single crystal Si through a thin oxidized film. CONSTITUTION:An N<+> type control gate region 15 is diffused in a P type Si substrate 11, a thin SiO2 film 18 is formed on the region, and a floating gate electrode 14 made of polycrystalline Si is formed on the film. A P<-> type polycrystalline Si is formed through a gate oxidized film 16 on the electrode, an N<+> type source region 12 and a drain region 13 are formed in the silicon, and the silicon interposed between the regions 12 and 13 is used as a channel region 20. In this manner, the channel conductance of the region 20 is varied by the voltage of the electrode 14, the electrostatic capacity is increased between the electrodes 14 and 15 while reducing the area, and an inexpensive low program voltage memory IC is obtained. |
