| 摘要 |
PURPOSE:To enhance the grade of integration of the semiconductor memory unit by a method wherein an insulating film containing a nitride film is provided between a substrate and a poly-silicon layer at the memory capacitor part and the transfer gate part of the transistor of the memory cell. CONSTITUTION:At the dynamic RAM using one layer poly-silicon, the insulating film at the transfer gate part of the transistor of the memory cell is formed of the thin oxide film 7 and the nitride film 18 for stabilization of the interface the same with the insulating film at the memory capacitor part. Accordingly, the positioning margin at the PR process to leave the gate oxide film at the memory cell part becomes unnecessary, and enhancement of the grade of integration can be attained. |
