| 摘要 |
PURPOSE:To improve the characteristics of a liquid crystal display panel in a thin MOS film semiconductor device by forming the Si film in thickness lower than 1,000Angstrom of a channel part and increasing the contact part larger than that, thereby improving light leakage characteristic. CONSTITUTION:When an Si film 1 made of polycrystal or single crystal is covered on a substrate formed with an active region, the thickness of an Si film 1 having ordinarily a thickness of 2,500-3,000Angstrom is set to lowr than 1,000Angstrom at the channel part only. The thickness of the contact parts disposed at both sides of the channel part is increased with the films made of the films 1, 5 laid with Si films 5, 6 under the channel and contact parts. Subsequently, a gate oxidized film 2 is covered on the channel part and the contact part including the parts, a gate electrode is formed on the channel part, and aluminum wirings 3, 4 are mounted through windows opened at the film 2 on the contact parts 5, 6. In this manner, the leakage current when the light is irradiated is reduced, and the erasure of the stored charge is reduced, thereby preventing the decrease in the displaying function. |
