| 摘要 |
A method for making the light-sensitive layer of a GaInAsP photodetector for the wavelength range from about 1350 nm to 1400 nm by liquid-phase epitaxy. A melt is saturated with phosphorus by introducing a first InP substrate into a ternary solution of GaAs and InAs in indium and maintaining the temperature constant at about 690 DEG C. for a few hours. After removal of the first substrate, the temperature is lowered by about 5 DEG C., and a second InP substrate, on which the desired layer is grown, is introduced into the melt. The cooling rate is approximately 1 DEG C./hr. |
