| 摘要 |
PURPOSE:To reduce the defects of Ga, and to improve crystallinity at an AB1-XCX intermetallic compound semiconductor crystal having Ga as the A element by a method wherein the C element is introduced or the B element is introduced according to the value X of the composition ratio, and the defects of Ga in the crystal are replaced with the elements thereof. CONSTITUTION:At the AB1-XCX intermetallic compound semiconductor crystal having Ga as the A element, the C element is introduced when the composition ratio X is 0<= X<=0.45, the B element is introduced when 0.45<=X<=1, and the defects of Ga in the crystal are replaced with the C element or the B element. The crystal is GaAs when composition ratio is X=0, and the crystal is GaP when X=1, and although GaAs is the direct transition type and GaP is the indirect transition type, GaAs1-XPX is the direct transition type in the range of 0<=X<=0.45 at the room temperature. After an epitaxial layer is formed on a GaAs wafer 1, and phosphorus ions are implanted in the whole surface of a P type layer 4 by the implanting quantity of 10<15>cm<3> for improvement of crystallinity, a heat treatment is performed. Ni-Zn-Au are evaporated on the surface of the P type layer for formation of electrodes. Au-Ge are evaporated on the surface of an N type layer, and the chip thereof is incorporated in an enclosing vessel to manufacture the diode. |
