发明名称 TRANSFER SYSTEM OF PATTERN FOR SEMICONDUCTOR
摘要 PURPOSE:To be able to apply predetermined exposure energy to a photosensitive film at all times, and to obtain the phtosensitive film pattern with prescribed line width by previously measuring intensity at each luminance line of a mercury-arc lamp and setting exposure time on the basis of the spectral sensitivity of a photosensitizing agent. CONSTITUTION:The spectral sensitivity of the photosensitizing agent is measured previously, and relative sensitivity corresponding to each emission line of the mercury-arc lamp is inputted to an arithmetic circuit previously. The intensity of each luminance line of the mercury-arc lamp is measured just before exposure, and computed by the arithmeitc circuit, and exposure time when exposure energy reaches a fixed value is set. (t) Represents exposure time, (E) standard exposure energy value, Ij the intensity of some luminance line and Sj the relative sensitivity of the photosensitizer to the wavelength of Ij in an arithmetic Formula in the figure. As the result of practical use regarding three mercury- arc lamps, line width acquired in the photosensitive film pattern after exposure development treatment while using a pattern with 4.00mum line width as a photo- mask pattern extends over 4.02mum, 4.04mum, and 4.00mum, and extremely excellent uniformity is obtained.
申请公布号 JPS58159326(A) 申请公布日期 1983.09.21
申请号 JP19820041636 申请日期 1982.03.18
申请人 TOKYO SHIBAURA DENKI KK 发明人 KAMATA YUTAKA
分类号 H01L21/30;(IPC1-7):01L21/30 主分类号 H01L21/30
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