| 摘要 |
PURPOSE:To perform separation with no defect which is fit to fine structure and applicable to bi-polar integrated circuits, MOS integrated circuits, etc. by a method wherein an epitaxial growth layer is selectively formed only on the exposed part of a given region in the substrate surface of a recessed portion formed through selective etching. CONSTITUTION:Due to directivity of etching, a silicon dioxide film 15 coated on the lower surface of a silicon dioxide film 13 as well as side walls and a part of the bottom surface of a recessed portion 14 for separation region remains non-removed in the recessed portion 14 for separation region. Subsequently, when epitaxial growth is performed using, for example, dichlorsilane gas, an epitaxial growth layer 17 is formed on a bottom surface 16 of the recessed portion 14 for separation region, but nothing is formed on the silicon dioxide film 13. Thus, the recessed portion 14 for separation region is filled with the epitaxial growth layer 17, and at the same time the epitaxial growth layer 17 is separated from an epitaxial layer 12 on side in insulating manner. Finally, a silicon dioxide film 18 is formed on the upper surface of the epitaxial layer 17. |
