| 摘要 |
PURPOSE:To obtain a transistor of high integration and high hFE particularly with small base resistance by forming a base electrode pickup part in the surface interposd with the electrode pickup parts of the emitter and collector. CONSTITUTION:After an N type epitaxial layer 2 is selectively oxidized at 4 on an N type substrate 1, a P type layer 5 is formed with an Si3N4 mask 3. After selectively oxidized, the mask 3 is removed, a window is opened, a resist mask 6 is covered, P ions are implanted, thereby forming an N type ohmic electrode pickup part 7. The resist 6 is removed, and a metal wiring layer 8 is attached. According to this configuration, a P-N-P type transistor having extremely small base resistance can be obtained. Since the interval between the collector and the emitter can be formed at approx. 2mum, the device having high hFE can be obtained, and since a buried layer is particularly unnecessary, N-P-N parasitic effect of the buried layer as an emitter can be prevented. In this manner, a transistor of high integration and high performance can be obtained. |
