| 摘要 |
PURPOSE:To obtain a solid state device of small size and high integration by integrally fixing the first and second solid state circuit devices through a conductive material or other bonding material. CONSTITUTION:An N type epitaxial layer 2 is isolated with a P type layer 3 on a P type Si substrate 1, the layer 3 and an N type layer 4 are selectively formed in an insular region as prescribed, a window is opened at an SiO2 film 5, and an electrode 6 is formed, thereby forming the first semiconductor device. A piezoelectric device attached with an electrode 8 is connected to a piezoelectric effect substrate 7 made of a ferrodielectric material with a conductive adhesive 9, and both are integrated. According to this configuration, a solid state device of small size and high integration can be obtained. In some cases, insulating adhesive or soft metal adhesive is used. The modification of the piezoelectric effect device is received as the variation in the amplification factor due to the piezoelectric effect of semiconductor, and the device for directly detecting the oscillator or ultrafine displacement with a temperature compensating circuit can be formed in small size and high integration. |
