| 摘要 |
PURPOSE:To obtain an amorphous silicon (a-Si) photoconductive layer excellent in overall characteristics as the photosensitizer by keeping an absorption coefficient ratio of absorption peaks in infrared absorption spectra of 2090cm<-1> and 2,000<-1> within a specific range. CONSTITUTION:In a capacity coupling type glow discharge decomposing device, H2 and SiH4 gas are discharged from tanks 1, 2, oxygen gas from a tank 4 as necessary and B2H6 gas from a tank 3 when boron is further made contain, these gases are forwarded into an electrode plate 28 and discharged uniformly, and the a-Si photoconductive layer is formed onto a substrate 23. A range of the absorption coefficiency ratio mainly depends upon the high frequency power of the electrode plate 28, and the a-Si photoconductive layer of the absorption coefficient ratio of approximately 0.2-1.7 is obtained by bringing power to approximately 0.05-1.5kw. Charge reception capability lowers remarakbly when power is approximately 0.05kw or less, and photo sensitivity lowers considerably in the a-Si layer formed at 1.5kw or more. |
