| 摘要 |
<p>PURPOSE:To enable to obtain the titled package, having excellent heat radiating property and an electrostatic capacity in the neighborhood of that of the package heretofore in use, which can be used as the package for elements such as a high-speed logical LSI and the like by a method wherein a wiring is provided between the internal connecting terminal and the external lead on the insulative layer of a carborundum substrate having an insulative layer on the surface. CONSTITUTION:An insulative layer 10 is provided at least on one face of an SiC substrate 9, and an internal electrode 5 and a wiring 6, between the internal electrode of the external lead 7 and the external lead, are provided on the insulative layer. An SiO2 film can be most uniformly adhered to the insulating layer constructed as above by performing an oxidizing method on SiC in a high temperature O2 atmosphere or H2O atmosphere. A lead pin 7 is constructed in such a manner that it is provided on the metal wiring layer 6 which is provided on the insulative layer 10 located on the surface of the substrate, and the construction wherein the lead pin is buried in the substrate or penetrating the substrate is not used. In the construction wherein the external lead is attached to the side face of the substrate, an electrostatic capacity larger than that of the construction indicated in the diagram exists between the external lead 7 and the wiring 6, and therefore, the construction having the internal electrode 5, the wiring 6 and the external lead 7 on the same plane surface is advantageous over the construction having the external lead provided on the side face of the substrate.</p> |
