发明名称 REACTIVE ION ETCHING DEVICE
摘要 PURPOSE:To obtain an almost uniform electric field between the electrodes of the reactive ion etching device by a method wherein electrodes (Logoski electrodes or electrodes closely similar thereto), which are formed into a round shape at the edge part, are used for the titled device. CONSTITUTION:When the edge part of the device is thickly and roundishly formed and the dimensions of each part is selected in the range of a=2-6dm, b=1.5-3dm, c=2-4dm and r=0.2-0.6dm respectively, the electric field between electrodes is brought nearer to uniform field, and a highly precise work with which no undercut or thinning in line width and the like will be generated can be performed, thereby enabling to increase the production efficiency of the device without making an increase in its size.
申请公布号 JPS58158926(A) 申请公布日期 1983.09.21
申请号 JP19820040871 申请日期 1982.03.17
申请人 TOKYO SHIBAURA DENKI KK 发明人 WATANABE TOORU
分类号 H01L21/302;H01J37/32;H01L21/3065;(IPC1-7):01L21/302 主分类号 H01L21/302
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