| 摘要 |
PURPOSE:To eliminate the variation of the line width of the resist pattern by selecting the gru n range of electron beams and the combination of a resist and a developer. CONSTITUTION:In the resist pattern formed by irradiating electron beams to the resist 6, the line width is made wider than width designed at a position 7a corresponding to the thick section 7 of resist film thickness, and made narrower than that at a position 8a corresponding to a thin section 8. Since the variation of line width largely depends upon not only the thickness of the resist but also the change of reflected electron intensity in an edge section, the variation of line width due to the change of reflected electron intensity can be eliminated when selecting the acceleration voltage of electron beams in which the ratio G/h of the gru n range G of electron beams to foundation uneven height (h) reaches 7 or more. The variation of film thickness can be reduced more by using PMMA (poly-methyl-metha-acrylate) as the resist and IAA (iso-amyl-acetate) as the developer. |
