| 摘要 |
PURPOSE:To form a Fe-doped high resistance buffer layer stably with excellent reproducibility without reducing growth rate by fitting Fe on the gas upstream side of a feed pipe for Fe and Ga on the downstream side and introducing HCl gas. CONSTITUTION:Fe 36 is fitted on the gas upstream side in the feed pipe 32 for Fe and Ga 37 on the gas downstream side. Since a mixed gas 33 of HCl and H2 reacts with Fe 36 first and HCl not reacted reacts with Ga 37, is converted approximately into GaCl and is added to GaCl generated from source Ga 38, the quantity of GaCl on a substrate 39 increases, and the growth rate of an epitaxial layer is increased. The quantity of HCl is increased while growth rate is increased, and the number of growth in source Ga in one batch is enabled approximately sixty times, and can be augmented largely as compared to approximately ten times the conventional methods. |
