| 摘要 |
PURPOSE:To obtain an MOS type element having small gate width by forming an Si3N4 film of an oxidation resistance substance on an active region of one conductive type semiconductor substrate, covering the film with an SiO2 film, heat treating it to produce a thick filed oxidized film at the periphery of the film, then removing the film and forming a gate oxidized film and a gate electrode disposed on the oxidized film. CONSTITUTION:An Si3N4 film 42 of oxidation resistance is covered on one conductive type Si substrate 41, a photoresist film 43 of the prescribed pattern is covered, etched to allow the film 42 to remain only on the active region. Then, an SiO2 film is covered on the overall surface including the film 42, heat treated to produce a thick field SiO2 film 44 at the periphery of the remaining film 42, the films 49, 42 are removed, and a thin gate oxidized film 44a is covered on the surface of the substrate 41 surrounded by the film 44. Subsequently, a gate electrodes 45 is formed on the center surface of the film 44a, with the electrode 45 as a mask ions are implanted into the substrate 41 at both sides, thereby forming reverse conductive type source and drain regions 46a and 46b. |
