| 摘要 |
PURPOSE:To contrive the attain high integration, and to enhance performance of the device by a method wherein U-shape grooves are formed as isolation layers, gate regions are formed adjoining to the U-shape grooves by diffusing impurities from the inside walls of the grooves, and after the inside walls of the U-shape grooves are oxidized, polysilicon is filled up in the grooves. CONSTITUTION:An N<+> type buried layer, an N type silicon semiconductor layer 11, an Si3N4 film 12 and windows 12A for formation of the isolation layers are formed on a silicon semiconductor substrate, and moreover the U-shape grooves 13 are formed. After boron silicate glass film 14 are formed on the inside walls of the U-shape grooves 13, boron is diffused to form the P<+> type gate regions 15. After oxide films are formed on the inside walls of the U-shape grooves, and field oxide films 16 are formed, poly-silicon 17 is filled up in the U-shape grooves. Poly-silicon exposing on the surface is oxidized to form as a part of the field oxide films 16. After then, a drain electrode 18D, a source electrode 18S, and other electrodes, wirings are formed under the conventional technique. |
