| 摘要 |
PURPOSE:To obtain a semiconductor device having ultrafine size and preferable performance by forming a raised pattern on a semiconductor substrate, covering the entire surface with a thin film, etching it to allow the thin film to remain only on the side surfaces of the pattern, removing part of the pattern and forming the thin film in grooves. CONSTITUTION:A thick field oxidized film 3 is formed while surrounding a p<+> type channel-cut region 2 at the periphery of a p type Si substrate 1, an n type polycrystalline Si gate electrode 5 is formed through a gate oxidized film 6 on the center surface of the substrate 1, and a PSG film 4 is covered. With the film 4 as a mask a shallow n<+> type source region 81 and a drain region 91 are diffused at both sides of the electrode 5, and an SiO2 film 7 and a polycrystalline Si film 10 are covered on the overall surface. Thereafter, grooved Si films 10' are allowed to remain only on the side faces of the electrode 5 and film 4 by etching, the film 4 surrounded by the films is removed, the films 10' are projected as 10'', aluminum wiring film 12 is covered on the regions 81, 91 while spacing them, and part of the regions 81, 91 are simultaneously formed deeply, and the film 10'' is removed. |
