| 摘要 |
PURPOSE:To prevent the erroneous operation of the titled semiconductor device by a method wherein the thickness of the metal wiring part is partially changed, and the rate of occupying area of the metal wiring part in the pellet is decreased, thereby enabling to reduce the resistance of the wiring. CONSTITUTION:A silicon oxide film 2 is formed on the substrate 1 having an element region. Subsequently, after photoresist 4 has been applied on the above, an aperture 5 is formed at the part where a wiring film is to be thickly formed by performing exposing and developing processes. Then, aluminum thin films 6 and 6' are formed by performing a selective etching on the silicon oxide film 2 located at the aperture 5. Subsequently, when the photoresist 5 has been exfoliated, the first aluminum 6 is left on the part where film thickness is to be increased. Then, after an aluminum thin film has been formed by covering the second aluminum 7, a pattern is formed by performing a photoetching, thereby enabling to partially increase the film thickness of the wiring part. |
