| 摘要 |
PURPOSE:To maintain the effect of stabilized surface of the semiconductor element located on a silicon nitride film, to prevent the abnormal reaction as well as to increase the reliability of the titled semiconductor device by a method wherein an aperture part for lead out of a wiring layer is provided on an insulating film, and after a silicon nitride film has been adhered to the above, an electrode wiring material is coated, and a wiring is formed by performing a selective anodizing method. CONSTITUTION:The silicon nitride film alone, located in the first aperture parts 103 and 103', is converted into a silicon oxide film. Subsequently, a double-layer structure consisting of a thin silicon film 107 and a thick aluminum film 108 is formed on a substrate by performing a vapor-deposition method. Then, a porous alumina film 109 is formed on the surface of the aluminum film 108 using the second anodizing method. The silicon thin film 107 is diffused into the aluminum film 108 by performing a heat treatment and a silicon-aluminum alloy layer 110 is formed. At this stage, the generation of microscopic cracks and protrusions on the alumina film 109 is reduced, and they can be totally eliminated by obtaining appropriate conditions of vapor deposition and heat treatment. Subsequently, the unnecessary part of the above is converted to an alumina film 111 by performing the third anodizing process using photoresist and the like as a mask, and a wiring pattern is formed. |
