发明名称 PRODUCTION OF SUPPORTING ELECTRODE FOR SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To produce a supporting electrode for semiconductor elements which is provided with planes and permits uniform joining by contacting tightly and thoroughly with the semiconductor chip by sintering a molding which is obtd. by compaction molding of molybdenum powder and has smooth projecing curved surfaces. CONSTITUTION:Molybdenum powder having about 1-10mum average grain sizes is granulated to about 30-100mum and the granules are packed in dies having dies 31, upper, lower punches 32, 33 and are molded under about 1-3ton/cm<2>, whereby a molding 34 is obtained. The above-mentioned upper, lower punches 32, 33 of which the pressing surfaces have smooth hollow curved surfaces are used to form smooth projecting curved surfaces 35, 36 on a circular columnar molding 34. The ratio l/L between the height (l) of the surfaces 35, 36 and the height L of the molding 34 is set at 2X 10<-2>-5X10<-2>. The molding 34 is then sintered at about 1,750-1,850 deg.C, whereby the supporting electrode for semiconductor elements which has the coefft. of thermal expansion approximate to the coefft. of thermal expansion of semiconductors and has good heat and electrical conductivity, good wettability with brazing materials and high joint strength to lead wires is obtained.
申请公布号 JPS58157903(A) 申请公布日期 1983.09.20
申请号 JP19830030936 申请日期 1983.02.28
申请人 TOKYO SHIBAURA DENKI KK 发明人 KOIZUMI HIDEO;MIYASHITA YOUICHI
分类号 B22F5/00;C22C1/04;H01L21/52 主分类号 B22F5/00
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