| 摘要 |
PURPOSE:To maintain the purity of a sputtering target and to improve the purity of the resulted film, by forming prescribed detaining parts on a metallic plate and making the target fixable in said parts. CONSTITUTION:Detaining parts of a hollow shape 8 or a projecting shape 9 is formed on a metallic plate 7 of, for example, a copper plate. A sputtering target 2 in the molten state consisting of a low m.p. metallic material of, for example, tin, indium alloys, lead, etc., is cast into the detaining parts. The target 2 is bound with the plate 7 in a meshed state. Since the temp. is low and the contact time is short in this state, the plate 7 does not diffuse into the target 2, whereby the purity of the target 2 is maintained and the thin film of high purity is eventually obtained. |
