发明名称 Schottky diode-diode field effect transistor logic
摘要 Disclosed is a logic circuit with a plurality of AND logic elements, each including a plurality of Schottky diodes with each cathode connected to a logic input and the anodes connected in common to establish an AND output. A diode pull up FET is provided for each AND output, with the source connected to the AND output, the gate connected to the source, and the drain connected to a source of positive bias potential. An OR logic element includes a plurality of Schottky diodes with each anode connected to one of the AND outputs and the cathodes connected in common to establish an OR output, while a diode pull down FET has its drain connected to the OR output, with the gate connected to the source and the source connected to a source of negative bias potential. A level shifting diode is placed between the OR output and the pull down FET. An output FET is connected through its gate to the drain of the diode pull down FET, with the source connected to ground and the drain providing a logic output from the circuit. An output pull up FET has its source connected to the drain of the output FET, the gate connected to the source, and the drain connected to the source of positive bias potential.
申请公布号 US4405870(A) 申请公布日期 1983.09.20
申请号 US19800214924 申请日期 1980.12.10
申请人 ROCKWELL INTERNATIONAL CORPORATION 发明人 EDEN, RICHARD C.
分类号 H03K19/0956;(IPC1-7):H03K19/09;H03K19/12;H03K19/20;H03K19/01 主分类号 H03K19/0956
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