| 摘要 |
PURPOSE:To obtain a photoconductive material having always stable electrical, optical, and photconductive characteristics almost unaffected by use environments, remarkably excellent optical fatigue resistance, said properties not deteriorated by repeated uses, superior durability, and residual potential observed not at all or very little. CONSTITUTION:A photoconductive material 100 comprises a substrate 101, and a photoconductive amorphous layer 102 composed of an amorphous material a-Si (H, X) contg. Si as a main component, and H and/or halogen X, and said layer 102 has a first layer region 103 contg. O in a distribution state continuous in the thickness direction and rich on the side of said substrate 101, and a second layer region 104 contg. an element of group III of the periodic table as a component. The region 103 is located on the side of the substrate 101, and the relationship between the thickness TB of the region 104 and T (the thickness of the layer 102 subtracted by TB) is as follows: TB/T<=1. |
