| 摘要 |
PURPOSE:To obtain a photoconductive material having always stable electrical, optical, and photoconductive characteristics almost unaffected by use environments, remarkably excellent optical fatigue resistance, said properties not deteriorated by repeated uses, superior durability, and residual potential observed not at all or very little. CONSTITUTION:A photoconductive material 100 comprises a substrate 101, the first photoconductive amorphous layer 102 composed on an amorphous material contg. Si as a main component, and the second amorphous layer 106 composed of Si, C, and halogen. The layer 102 has the first layer region 103 contg. O as a component in a distribution state continuous in the thickness direction and rich on th side of said substrate 101, and the second layer region contg. an element of group III of the periodic table, including the region 103 on the side of the substrate 101, and the layer 102 has the following relationship: TB/T<=1, where TB is thickness of the layer region 104, and T is thickness of the layer 102 subtracted by TB. |
