| 摘要 |
PURPOSE:To prevent the mixing of impurities and to economize electric power consumption, by confining plasma into a limited space region by magnetic flux in the stage of forming thin films by a high frequency ion platin method. CONSTITUTION:An evaporating source 3 for evaporating a material to be vapor deposited and a substrate 4 to be deposited thereon with the evaporating material are disposed so as to face each other in a vacuum vessel 1 for vapor deposition sealed therein with an inert gas and/or reactive gas. Alternating magnetic fields of high frequencies are impressed in the space near the source 3 by using a high frequency power source to ionize the material to be vapor deposited. An induction coil 2' is used in this stage and the plasma generated by the same is limited in the space resion in the coil 2' to vapor deposit the ionized material to be vapor deposited on the substrate 4. The mixing of impurities is prevented and the wasteful consumption of electric power is averted. |
