Ion beam exposure of (g-Gex-Se1-x) inorganic resists

摘要

This invention relates to thin (g-Gex-Se1-x) positive ionresists and thin (g-Gex-Se1-x) with absorbed or chemically bonded silver as a negative ionresist, which when exposed to H+ ion beams and subsequently developed, for example by alkaline solutions, have a useful differential dissolution rate, when comparing exposed and unexposed areas, with excellent resolution. The ionresist materials and processes of the invention are useful, for example, in forming solid-state electronic articles.