Photoelectric conversion device and method of producing the same

摘要

There is disclosed a photoelectric conversion device comprising a transparent substrate; a transparent conductive film formed on said substrate; a photoconductive layer formed of hydrogenated amorphous silicon as an indispensable component and deposited on said transparent conductive film; and a chalcogen glass film formed on said photoconductive layer, wherein said chalcogen glass film includes at least a chalcogen glass layer formed in an atmosphere of inert gas kept at 1.5x10-2 to 1.5x10-1 Torr. As chalcogen glass is preferably used Sb2S3, As2S3, As2Se3 or Sb2Se3. The chalcogen glass film may be a composite film consisting of plural component layers. This invention is very useful to reduce dark current in an image pickup tube and to prevent image inversion in the image pickup tube.