| 摘要 |
A semiconductor device utilized in a monolithic integrated circuit for protection against large voltage transients comprises back-to-back zener diodes formed by two separate regions of one type conductivity extending through an epitaxial layer of the opposite type conductivity and contacting a buried pocket of the opposite type conductivity to form PN junctions therewith. In the preferred embodiment, one of the one-type-conductivity regions completely surrounds the other region of one type conductivity.
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