| 摘要 |
PURPOSE:To form a semiconductor integrated circuit having high performance and high reliability by implanting and diffusing an impurity into a reverse conductivity type epitaxial layer to shape one conductivity type diffusion layer and implanting and diffusing an impurity into one conductivity type diffusion layer to form a reverse conductivity type diffusion layer. CONSTITUTION:A reverse conductivity type buried layer 2 is formed selectively to one conductivity type semiconductor substrate 1, a reverse conductivity type epitaxial layer 3 is grown on the buried layer, and an isolation oxide film is shaped around the reverse conductivity type buried layer 2 and the reverse conductivity type epitaxial layer 3. A polysilicon film 5 is evaporated on the reverse conductivity type epitaxial layer and the whole surface on the isolation oxide film, and one conductivity type impurity (boron) is implaned into the reverse conductivity type epitaxial layer 3 through an ion implantation method, and diffused, thus forming one conductivity type diffusion layer 6. A reverse conductivity type impurity (phosphorus and arsenic) is implanted into one conductivity type diffusion layer through the ion implantation method, and diffused, thus shaping a reverse conductivity type diffusion layer 7. Accordingly, a semiconductor device having high performance and high reliability can be formed.
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