| 摘要 |
PURPOSE:To enable to finish the high temperature treatment process when a light receiving part and a guard ring part are formed at one time and improve the electric characteristic of a planar type APD wherein InP is the base body, by performing a heat treatment to electrically activate implanted Cd and Be. CONSTITUTION:A photo resist mask 12 having the first ion implantation window wherein the surface of a guard ring part forming region is exposed is formed on an epitaxial substrate for APD, then beryllium ions (Be<+>) are selectively implanted from the first ion implantation window of the mask 12, and accordingly a Be implanted region 8' is formed. An Si3N4 mask 13 having the second ion implantation window wherein the surface of a light receiving part forming region is exposed is formed on the epitaxial substrate for APD, then cadmium ions (Cd<+>) are selectively implanted from the second ion implantation window, and accordingly a Cd implanted region 7' is formed. Next, after removing the Si3N4 mask 13, a P evaporation preventing film 14 is formed on the epitaxial substrate for APD. |
