发明名称 PRODUCTION OF BAPB1-XBIXO3 SINGLE CRYSTAL
摘要 PURPOSE:To produce the titled single crystal without any impurities, variations in composition X, and internal strains and which can be treated at a comparatively low temp. by growing a crystal by the hydrothermal synthesis at specified temp. and pressure in an aq. soln. consisting essentially of nitrates. CONSTITUTION:A starting material and a substrate for growth are set in an autoclave filled with an aq. soln. consisting essentially of nitrates (e.g., LiNO3, KNO3, NaNO3, etc.), and the BaPb1-xBixO3 single crystal is grown by the hydrothermal synthesis at necessary temp. and pressure. The growth can be carried out by this method at about 300-600 deg.C, which are fairly low as compared with the conventional technique. Consequently, the titled single crystal without any impurities, variations in composition X, and internal strains can be produced.
申请公布号 JPS62235297(A) 申请公布日期 1987.10.15
申请号 JP19860077347 申请日期 1986.04.03
申请人 HIRANO SHINICHI;SEIKO INSTR & ELECTRONICS LTD 发明人 HIRANO SHINICHI;TOYOKUNI AKIRA;KURODA HIROSHI
分类号 C30B7/10;C30B7/00;C30B29/22 主分类号 C30B7/10
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