| 摘要 |
PURPOSE:To realize a better contact point by a method wherein a photoresist used for the formation of a contact window is retained to be removed only after the application of a metal coating for the formation of an electrode to ensure that emitter and base contact properly in line with electrodes without displacement. CONSTITUTION:An emitter layer 7 is formed by the diffusion technique, and the emitter window 6 is covered with an SiO2 film 8. By photoetching, an emitter contact window 10 and base contact window 11 are provided in the SiO2 film 8 and another SiO2 film 5, respectively, with a photoresist film 9 working as a mask. The photoresist film 9 should be as thick as an electrode Au layer (1- 2mum thick) or more. The photoresist film 9 is retained as it is and an electrode- forming metal 12 is subjected to the electron beam evaporation method at low temperatures so that the photoresist film 9 should not be deformed. The photoresist film 9 is then removed with fuming nitric acid or acetone, thereafter metal remains only on the contact points to work as electrodes. |
